BLP0408H9S30Z
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제조 업체:
앰프리언 미국 Inc.
기술:
RF Power Discrete Transistors
범주:
전자 반도체
상술
Product Category ::
RF Amplifier
Gain (dB) ::
20.2
Output Power (W) ::
30
Frequency Min (GHz) ::
0.4
Process ::
LDMOS
Frequency Max (GHz) ::
0.86
Manufacturer ::
Ampleon USA Inc.
소개
BLP0408H9S30Z는 Ampleon USA Inc.의 RF 증폭기입니다. 우리가 제공하는 것은 글로벌 시장에서 경쟁력있는 가격으로,상품에 대해 더 많이 알고 싶거나 저렴한 가격을 신청하면, 온라인 채팅을 통해 저희에게 연락하거나 우리에게 요금을 보내십시오!
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
BLA9H0912L-250U |
RF Power Discrete Transistors
|
|
|
|
C4H10P600AY |
RF Power Discrete Transistors
|
|
|
|
BLF8G22LS-160BV11 |
RF Power Discrete Transistors
|
|
|
|
BLP10H660PGY |
RF Power Discrete Transistors
|
|
|
|
BLS7G2730LS-200PU |
RF Power Discrete Transistors
|
|
|
|
BLP05H6700XRY |
RF Power Discrete Transistors
|
|
|
|
BLS9G2731LS-400U |
RF Power Discrete Transistors
|
|
|
|
BLC10G22XS-400AVTZ |
RF Power Discrete Transistors
|
|
|
|
BLF6G22LS-100,112 |
RF Power Discrete Transistors
|
|
|
|
BLC9G27XS-380AVTZ |
RF Power Discrete Transistors
|
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